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DESD1Z12

Marking:12M;Package:SOD-123;Plastic-Encapsulate Diodes

FEATURES Bi-directionalESDprotection Lowreversestand-offvoltage:12V Lowreverseclampingvoltage Lowleakagecurrent Fastresponsetime JESD22-A114-BESDRatingofclass3Bperhumanbodymodel IEC61000-4-2Level4ESDprotection

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

DESD3Z12

Marking:12M;Package:SOD-323;TVS Diode

Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) ◆ProtectsOnePowerorI/OPort ◆Lowleakagecurrent ◆Lowoperatingandclampingvoltages ◆Solid-stat

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SM12

Marking:12M;Package:SOT-23;ESD PROTECTION

Features ?ForSensitiveESDProtection ?ExcellentClampingCapability ?LowLeakage ?FastResponse,ResponseTimeLessthan1ns ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?HalogenFree.“Green”Device(Note1) ?LeadFreeFinish/RoHSCompliant(PSuffix

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽(yáng)電子三陽(yáng)電子有限公司

SM12T1G

Marking:12M;Package:SOT-23;2-Line Uni-directional TVS Diode

Features 450Wpeakpulsepower(8/20s) Protectsonebi-directionalortwouni-directionallines Ultralowleakage:nAlevel Operatingvoltage:12V Lowclampingvoltage Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV/ Contactdischarge:+30kV —I

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

GSOT12C

Marking:12M;Package:SOT23;TVS Diode Array

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

IMBG120R008M2H

Marking:12M2H008;Package:PG-TO263-7-HV-ND5.8;CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=144AatTC=100°C ?RDS(on)=7.7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R012M2H

Marking:12M2H012;Package:PG-TO263-7-HV-ND5.8;CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=102AatTC=100°C ?RDS(on)=12.2mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpara

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R017M2H

Marking:12M2H017;Package:PG-TO263-7-HV-ND5.8;CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=76AatTC=100°C ?RDS(on)=17.1mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R022M2H

Marking:12M2H022;Package:PG-TO263-7-HV-ND5.8;CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=62AatTC=100°C ?RDS(on)=21.6mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R026M2H

Marking:12M2H026;Package:PG-TO263-7-HV-ND5.8;CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=53AatTC=100°C ?RDS(on)=25.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    12M

  • 功能描述:

    _

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
2020+
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
ON/安森美
23+
SOT23-3
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢價(jià)
原廠原裝
13+
4990
原裝分銷
詢價(jià)
IR
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
詢價(jià)
美晶
15+
XTAL_3225
10000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
詢價(jià)
GEN
24+/25+
23
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
CEM
24+
SMD-8
50000
詢價(jià)
進(jìn)口原裝
23+
57
1556
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
IR
24+
DO-4
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
詢價(jià)
N
24+
DO
3000
原裝現(xiàn)貨假一罰十
詢價(jià)
更多12M供應(yīng)商 更新時(shí)間2025-6-23 14:09:00