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FDMA1028NZ

Marking：028；Package：MicroFET；Dual N-Channel PowerTrench MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BSC028N06LS3G

Marking：028N06LS；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?N-channel,logiclevel ?100avalanchetested ?Pb-freeplating;RoHSc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC028N06NSSC

Marking：028N06SC；Package：PG-WSON-8；OptiMOSTM Power-Transistor, 60 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?175°Crated ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA028N04NM3S

Marking：028N043S；Package：PG-TO220；OptiMOSTM 3 Power-Transistor, 40 V

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD028N06NF2S

Marking：028N06NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC028N03LF2S

Marking：028N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISZ028N03LF2S

Marking：028N03F；Package：PG-TSDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforwiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PSMN028N10NS2

Marking：028N10NS；Package：TOLL；100V N-Channel Enhancement Mode MOSFET

Feature ?RDS(ON)

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BSC028N06NST

Marking：028N06NS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    028

  • 制造商：

    Farnell/Pro-Power

  • 功能描述：

    WIRE BU BS6231 GRN/YEL 1MM 100M

  • 制造商：

    pro-power

  • 功能描述：

    WIRE, BU, BS6231, GRN/YEL, 1MM, 100M

  • 功能描述：

    WIRE, BU, BS6231, GRN/YEL, 1MM, 100M, Reel

  • Length(Imperial)：

    328ft, Reel

  • Length(Metric)：

    100m, Conductor Area

  • CSA：

    1mm2, Jacket

  • Colour：

    Green, Yellow, Jacket

  • Material：

    PVC(Polyvinyl Chloride), Conductor

  • Material：

    Copper, External , RoHS

  • Compliant：

    Yes

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更多028供應商 更新時間2025-4-26 16:10:00

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