ISL9021IINZ-T

Marking：021N；Package：4BallWLCSP；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mASingleLDOwithLowIQ,LowNoiseandHighPSRRLDO TheISL9021isasingleLDOprovidinghighperformancelowinputvoltage,highPSRR.Itdeliversguaranteedcontinuous250mAloadcurrentandisstablewith1μFto4.7μFofoutputcapacitance(±30)withanESRrangeof5mΩto400mΩ. Featu

IPB021N06N3G

Marking：021N06N；Package：PG-TO263-3；OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

IPF021N13NM6

Marking：021N13N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freeleadpla

NVMYS021N10MCLTWG

Marking：021N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 23 m, 31 A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant

BSC021N08NS5

Marking：021N05N；Package：PG-TSON-8-3；MOSFET- OptiMOS5 Power-Transistor,80v

NTMYS021N06CLTWG

Marking：021N06CL；Package：LFPAK4；Power MOSFET 60 V, 21 m, 27 A, Single N??hannel

NVMYS021N06CLTWG

Marking：021N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel