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749252020

Marking：020；WE-CST Current Sense Transformer

GeneralInformation: OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

BSC020N03LSG

Marking：020N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel;Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?Avalanc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC020N03MSG

Marking：020N03MS；Package：PG-TDSON-8；OptiMOS?? M-Series Power-MOSFET

Features ?Optimizedfor5Vdriverapplication(Notebook,VGA,POL) ?LowFOMSWforHighFrequencySMPS ?100Avalanchetested ?N-channel ?Verylowon-resistanceRDS(on)@VGS=4.5V ?ExcellentgatechargexRDS(on)product(FOM) ?QualifiedaccordingtoJEDEC1)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD020N03LF2S

Marking：020N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 PowerTransistor, 30 V

Features ?Optimizedforwiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP020N03LF2S

Marking：020N03F2；Package：PG-TO220-3；MOSFET StrongIRFET?2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPT020N10N5

Marking：020N10N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 100 V

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPT020N13NM6

Marking：020N13N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freeleadpla

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTC020N13NM6

Marking：020N13N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freeleadpla

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTG020N13NM6

Marking：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freeleadpla

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IQD020N10NM5

Marking：02010N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100%avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

替換型號(hào)

詳細(xì)參數(shù)

  • 型號(hào)：

    020

  • 制造商：

    VIRG PLAST

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SUYIN
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207
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全新原裝 貨期兩周
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201
原裝正品現(xiàn)貨,可開(kāi)發(fā)票,假一賠十
 詢價(jià)
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2020+
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316
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
SUYIN
23+
原廠封裝
90000
一定原裝深圳現(xiàn)貨
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富士
23+
TO220
1778
專業(yè)優(yōu)勢(shì)供應(yīng)
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24+
0201L
9860
原裝現(xiàn)貨/放心購(gòu)買
 詢價(jià)
HARTING
2021+
母座
285000
專供連接器,軍工合格供應(yīng)商!
 詢價(jià)
YAGEO
500000
詢價(jià)
COSONIC
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
更多020供應(yīng)商 更新時(shí)間2025-2-15 10:50:00

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