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NVLJWS011N04CLT1G

Marking：011N；Package：WDFNW6；MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVLJWS011N06CLTAG

Marking：011N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

IPB011N04NF2S

Marking：011N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP011N03LF2S

Marking：011N03F2；Package：PG-TO220-3；MOSFET StrongIRFET?2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP011N04NF2S

Marking：011N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTG011N08NM5

Marking：011N08N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 80 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealforhighfrequencyswitchingandsync.rec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NCE011N30GU

Marking：011N30GU；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE011N30GUusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NVMYS011N04CTWG

Marking：011N04C；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BSC011N03LST

Marking：011N03LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 30 V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC011N03L5S

Marking：011N03L5；Package：PG-TDSON-8；Optimized for high performance Buck converter

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
DFN-85X6
5000
全現原裝公司現貨
 詢價
INFINEON
2018+
TO263
6528
只做原裝正品假一賠十!只要網上有上百分百有庫存放心
 詢價
INFINEON/英飛凌
23+
TO-220
10000
公司只做原裝正品
 詢價
12
24+
DFN-85X6
7500
原裝現貨假一賠十
 詢價
INFINEON
22+
TO-220
6000
十年配單,只做原裝
 詢價
INFINEON/英飛凌
23+
TO-TO-220
12300
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
INFINEON
23+
TO-220
6000
原裝正品，支持實單
 詢價
INFINEON
23+
TO-220
8400
專注配單,只做原裝進口現貨
 詢價
INFINEON/英飛凌
22+
TO-220
90058
詢價
INFINEON
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
更多011N供應商 更新時間2025-2-15 10:20:00

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