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XPH1R104PS

Marking：K4H；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ?Automotive ?MotorDrivers ?SwitchingVoltageRegulators Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:Vth=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

XPH1R104PS

N-Channel MOSFET

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=840V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.14mΩ(Max)@VGS=10V APPLICATIONS ·SolarInverters ·Motordrive ·DC-DCconverter ·powerswitchandsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

TPH1R104PB

SiliconN-channelMOS(U-MOS-H)

1.Applications ?Automotive ?MotorDrivers ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPW1R104PB

SiliconN-channelMOS(U-MOS-H)

1.Applications ?Automotive ?MotorDrivers ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

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TOSHIBA
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35960
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24+
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35960
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24+
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23+
DFN5X6-8
360000
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3000
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TOSHIBA
兩年內(nèi)
NA
200
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TI
21+
QFN24
6000
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XMULTIPLE
2021+
RJ45
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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Apex
1824+
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16
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AMCC
2138+
BGA
8960
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更多XPH1R104PS供應商 更新時間2025-1-20 10:54:00

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