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WFU1N60N

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemi’sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficiency

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES ?Hermeticallysealed ?Breakdownvoltagerange6.8-200volts ?Glasspassivatedjunction ?Excellentclampingcapability ?Lowzenerimpedance ?100surgetested ?-55°Cto+150°C ?Bi-directional MAXIMUMRATING ?PeakPulsePower(Ppk):15000Watts(10x1000μs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features ?GermaniumGlassDiode ?RoHSCompliance

ETCList of Unclassifed Manufacturers

未分類制造商

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

1N60

600VN-ChannelMOSFET

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

詳細(xì)參數(shù)

  • 型號：

    WFU1N60N

  • 制造商：

    WINSEMI

  • 制造商全稱：

    WINSEMI

  • 功能描述：

    Silicon N-Channel MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
W
22+
TO-251
6000
十年配單,只做原裝
 詢價
W
23+
TO-251
6000
原裝正品，支持實(shí)單
 詢價
原廠原裝
2023+環(huán)保現(xiàn)貨
IPAK 
250000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
W
22+
TO-251
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
W
24+
TO-251
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
WISDOM
23+
TO-220
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
WISDOM
24+
TO-251
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
NA
2018+
TO251
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
WISDOM
2022+
57
全新原裝 貨期兩周
 詢價
Wisdom/威士頓
23+24
TO-251
17720
專業(yè)經(jīng)營各種場效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
 詢價
更多WFU1N60N供應(yīng)商 更新時間2025-3-29 14:01:00

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