首頁 >1N60>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

1N60

GOLD BONDED GERMANIUM DIODE

GermaniumGlassDiode Features ?GermaniumGlassDiode ?RoHSCompliance

ETCList of Unclassifed Manufacturers

未分類制造商

1N60

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES ?Hermeticallysealed ?Breakdownvoltagerange6.8-200volts ?Glasspassivatedjunction ?Excellentclampingcapability ?Lowzenerimpedance ?100surgetested ?-55°Cto+150°C ?Bi-directional MAXIMUMRATING ?PeakPulsePower(Ppk):15000Watts(10x1000μs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

1N60

Schottky Barrier Diode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

1N60

JEDEC DO-7 PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N60

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60

GERMANIUM DIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

1N60

Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

1N60

600V N-Channel MOSFET

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

Schottky Barrier Rectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ?Metal-on-siliconjunction,majoritycarrierconduction ?Highcurrentcapability,Lowforwardvoltagedrop ?ExtremelylowreversecurrentIR ?Ultraspeedswitchingcharacteristics ?Smalltemperaturecoefficientofforwardcharacteristics ?Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團濟南晶恒電子有限責任公司

1N60

SMALL SIGNAL SCHOTTKY DIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N60

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60

Schottky Barrier Rectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) ?MoistureSensitivityLevel1 MaximumRatings ?Storage&

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

1N60

Low forward voltage drop - low power consumption

FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

1N60

N-CHANNEL MOSFET

DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

1N60

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

1N60

N-Channel Power MOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell1N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof1.2A,fastswitc

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

1N60

Small Signal Schottky Diodes

VOLTAGERANGE:40V CURRENT:0.03A DO-35(GLASS) FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforward

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1N60

Fast Switching

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent–ID=1A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequireme

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    1N60

  • 制造商：

    JINANJINGHENG

  • 制造商全稱：

    Jinan Jingheng(Group) Co.,Ltd

  • 功能描述：

    SMALL SIGNAL SCHOTTKY DIODES

供應商型號品牌批號封裝庫存備注價格
FQP
24+
TO220F
6580
原裝現(xiàn)貨!
 詢價
0
1101
100
就找我吧!--邀您體驗愉快問購元件!
 詢價
MSV
17+
TO252251
5739
大量庫存
 詢價
13+14+
TO92
50000
全新原裝
 詢價
TOSHIBA
2022
LL-34 / SOD-80
1600
全新原裝,房間現(xiàn)貨
 詢價
SEMITEH
2023+
SOD80
15000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
2000
50
詢價
德愛
2410+
TO-251
32100
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
XYJ
23+
TO-220
89881
詢價
HJ
11+
TO-92/TO251
21000
詢價
更多1N60供應商 更新時間2024-12-22 13:36:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多