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VT3

包裝:盒 類別:傳感器,變送器 浮子,液位傳感器 描述:SEN LVL COND 3 PROBE PTFE

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

VT300

Photoconductive Cells and Analog Optoisolators (Vactrols)

CustomandSemi-CustomDevices Uponrequest,andwheresufficientquantitiesareinvolved,PerkinElmerOptoelectronicswillteststandardpartstoyouruniquesetofspecifications.Theadvantageoftestingpartsunderactualoperatingconditionsispredictableperformanceintheapplication. Pe

PerkinElmer

PerkinElmer Optoelectronics

VT300CT

Photoconductive Cells and Analog Optoisolators (Vactrols)

CustomandSemi-CustomDevices Uponrequest,andwheresufficientquantitiesareinvolved,PerkinElmerOptoelectronicswillteststandardpartstoyouruniquesetofspecifications.Theadvantageoftestingpartsunderactualoperatingconditionsispredictableperformanceintheapplication. Pe

PerkinElmer

PerkinElmer Optoelectronics

VT3045BP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS ???Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045BP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045BP_V01

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045BP-M3/4W

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS ???Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freeaccordingtoI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045C_V01

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?TJ200°Cmax.insolarbypassmodeapplication ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?TJ200°Cmax.insolarbypassmodeapplication ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045CBP_V01

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?TJ200°Cmax.insolarbypassmodeapplication ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045CBP-M3-4W

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?TJ200°Cmax.insolarbypassmodeapplication ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045CHM3

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freeaccordingtoI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3045C-M3

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freeaccordingtoI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3060C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3060C-E3

Trench MOS Schottky technology

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3060C-E3_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    VT3

  • 制造商:

    Carlo Gavazzi Inc.

  • 類別:

    傳感器,變送器 > 浮子,液位傳感器

  • 系列:

    VT

  • 包裝:

  • 類型:

    液體

  • 材料 - 殼體和棱柱:

    聚四氟乙烯(PTFE)

  • 工作溫度:

    0°C ~ 145°C

  • 描述:

    SEN LVL COND 3 PROBE PTFE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
SOT5
3629
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電!
詢價(jià)
Carlo Gavazzi
22+
Na
1208
航宇科工半導(dǎo)體-中國航天科工集團(tuán)戰(zhàn)略合作伙伴!
詢價(jià)
24+
N/A
58000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
VOLTERRA
08+
BGA
48
詢價(jià)
TI
00/01+
TSSOP48
274
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
00+
BGA
2255
全新原裝進(jìn)口自己庫存優(yōu)勢(shì)
詢價(jià)
VIA
23+
BGA
6500
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購!
詢價(jià)
PHILIP
24+
SMD20
3000
自己現(xiàn)貨
詢價(jià)
VIA
22+
SBGA548鋼
680
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
詢價(jià)
VOLTERRA
17+
BGA
6200
100%原裝正品現(xiàn)貨
詢價(jià)
更多VT3供應(yīng)商 更新時(shí)間2025-1-7 15:53:00