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VNB20N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07FI,VNB20N07andVNV20N07aremonolithicdevicesmadeusingSTMicroelectronicsVlPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB20N07

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB20N07-E

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB20N07TR-E

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP20N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP20N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

VNP20N07FI

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP20N07FI

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP20N07FI

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07FI,VNB20N07andVNV20N07aremonolithicdevicesmadeusingSTMicroelectronicsVlPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV20N07

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    VNP20N07FI-E

  • 功能描述：

    電源開關(guān) IC - 配電 N-Ch 70V 20A OmniFET

  • RoHS：

    否

  • 制造商：

    Exar

  • 輸出端數(shù)量：

    1

  • 開啟電阻（最大值）：

    85 mOhms

  • 開啟時間（最大值）：

    400 us

  • 關(guān)閉時間（最大值）：

    20 us

  • 工作電源電壓：

    3.2 V to 6.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOT-23-5

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
24+
SOP-10
10000
詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
22+
TO-220
19149
詢價
ST
23+
7
16900
正規(guī)渠道,只有原裝!
 詢價
ST
24+
7
200000
原裝進(jìn)口正口,支持樣品
 詢價
ST
23+
TO220ABNONIS
12923
全新原裝
 詢價
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價
ST
22+23+
TO220
31737
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
ST
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價
ST
1836+
TO-220
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多VNP20N07FI-E供應(yīng)商 更新時間2025-3-26 16:00:00

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