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VND5N07

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VND5N07

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VND5N07

fullyautoprotectedPowerMOSFET

Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics?VIPower?M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VND5N07-E

fullyautoprotectedPowerMOSFET

Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics?VIPower?M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VND5N07FI

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VND5N07FM

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VND5N07TR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics?VIPower?M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNK5N07FM

fullyautoprotectedPowerMOSFET

Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics?VIPower?M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNK5N07FM

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNK5N07FM

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNP5N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNP5N07FI

fullyautoprotectedPowerMOSFET

Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics?VIPower?M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNP5N07FI

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

VNP5N07FI

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

詳細參數(shù)

  • 型號:

    VNP5N07FI-E

  • 功能描述:

    MOSFET N-Ch 70V 5A OmniFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
STM
24+
50
詢價
意法半導體
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
ST/意法
TO-220F
貨真價實,假一罰十
25000
詢價
ST/意法
22+
TO-220F
31250
鄭重承諾只做原裝進口現(xiàn)貨
詢價
ST/意法
22+
TO-220F
40256
本公司只做原裝進口現(xiàn)貨
詢價
ST
23+
TO-220/F
16900
正規(guī)渠道,只有原裝!
詢價
ST
22+
TO-220/F
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價
ST/意法
23+
TO-220
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST/意法
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價
更多VNP5N07FI-E供應商 更新時間2024-10-23 10:20:00