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VBE165R02

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBE165R02

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBE165R02_V01

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBE165R02S

N-Channel 650V (D -S) Super Junction Power MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBFB165R02

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBFB165R02S

N-Channel650V(D-S)SuperJunctionPowerMOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBM165R02

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBM165R02

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBM165R02S

N-Channel650V(D-S)SuperJunctionPowerMOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBMB165R02

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBMB165R02S

N-Channel650V(D-S)SuperJunctionPowerMOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VBsemi(臺(tái)灣微碧)
2112+
TO-252
105000
2500個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
24+
N/A
48000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
VBSEMI
24+
TO-252
779
只做原裝 特價(jià) 一片起送
 詢價(jià)
VBsemi臺(tái)灣微碧
21+
TO-252
17071
原裝現(xiàn)貨,假一罰十
 詢價(jià)
VBsemi(微碧)
23+
TO2523
5000
誠信服務(wù)，絕對(duì)原裝原盤
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IXYS
22+
ECOPAC1
9000
原廠渠道,現(xiàn)貨配單
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IXYS
23+
ECOPAC1
9000
原裝正品，支持實(shí)單
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IXYS
23+
RECTIFIERBRIDGE
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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更多VBE165R02供應(yīng)商 更新時(shí)間2024-12-30 15:01:00

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