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VBE1101M

N-Channel 100 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?150°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1101M_V01

N-Channel 100 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?150°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1101MC

N-Channel 100 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1102M

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1102M_V01

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1102N

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?PrimarySideSwitch ?IsolatedDC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1102N_V01

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?PrimarySideSwitch ?IsolatedDC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1104N

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1104N_V01

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1104NA

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1104NB

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1104NC

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1105

N-Channel 100V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1105_V01

N-Channel 100V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1106N

N-Channel 100 V (D-S) MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100UIStested APPLICATIONS ?Primarysideswitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1106N_V01

N-Channel 100 V (D-S) MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100UIStested APPLICATIONS ?Primarysideswitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1152N

N-Channel 150 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1154N

N-Channel 150 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?ExtremelyLowQgdforSwitchingLosses ?100RgTested ?100AvalancheTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1158N

N-Channel 150 V (D-S) MOSFET

FEATURES Halogen-freeAccordingtoIEC61249-2-21 Definition ExtremelyLowQgdforSwitchingLosses 100RgTested 100AvalancheTested ComplianttoRoHSDirective2002/95/EC APPLICATIONS PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    VBE

  • 功能描述:

    橋式整流器 100 Amps 600V

  • RoHS:

  • 制造商:

    Vishay

  • 產(chǎn)品:

    Single Phase Bridge

  • 峰值反向電壓:

    1000 V 最大 RMS

  • 正向連續(xù)電流:

    4.5 A

  • 最大浪涌電流:

    450 A

  • 正向電壓下降:

    1 V

  • 最大反向漏泄電流:

    10 uA

  • 最大工作溫度:

    + 150 C

  • 長(zhǎng)度:

    30.3 mm

  • 寬度:

    4.1 mm

  • 高度:

    20.3 mm

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    SIP-4

  • 封裝:

    Tube

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IXYS
10+
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85
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ECO-PAC1
48
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DIODEBRIDGEFAST2000VV1-A
1690
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IXYSCORPORATION
10
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13528
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更多VBE供應(yīng)商 更新時(shí)間2024-11-7 11:04:00