| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V, | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V, | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION TheUPA800TFcontainstwoNE680NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V, | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V, | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD TheμPA802Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheμPA802Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD TheμPA802Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheμPA802Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD μPA803Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) ?ASurfaceMountingPackageAdopted ?Built-in2Transistors | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD μPA803Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) ?ASurfaceMountingPackageAdopted ?Built-in2Transistors | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD μPA803Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) ?ASurfaceMountingPackageAdopted ?Built-in2Transistors | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA804TChasbuilt-intwotransistorswhichweredevelopedforUHF. FEATURES ?HighfT:fT=5.0GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?Flat-lead6-pinthin-typeultrasuperminimoldpackage ?Built-in2transistors(2×2SC5004) | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
詳細(xì)參數(shù)
- 型號(hào)：
UPA80
- 制造商：
NEC
- 制造商全稱(chēng)：
NEC
- 功能描述：
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
SOT363 |
19400 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
NEC |
24+ |
SOT-363/SOT-323-6 |
7952 |
新進(jìn)庫(kù)存/原裝 |
詢(xún)價(jià) | ||
NEC |
23+ |
SC70-6 |
12000 |
全新原裝優(yōu)勢(shì) |
詢(xún)價(jià) | ||
NEC |
1708+ |
SO6 |
12500 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) | ||
NEC |
22+ |
SO6 |
8200 |
全新進(jìn)口原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
MINI |
24+ |
SMD其他電子元 |
17 |
一級(jí)代理全新原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
SOT-363 |
23+ |
NA |
15659 |
振宏微專(zhuān)業(yè)只做正品,假一罰百! |
詢(xún)價(jià) | ||
NEC |
22+23+ |
SC70-6 |
78416 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
NEC |
23+ |
SC70-6 |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢(xún)價(jià) | ||
NEC |
19+ |
SC70-6 |
20000 |
5000 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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- UPB1A332MHD
- UPB1A471MPD1TD
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- UPB1H100MDD1TD
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- UPB1V470MED
- UPB2C101MHD1TN
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- UPB2C331MHD
- UPB2C470MHD1TO
- UPB2C680MHD
- UPB2C681MRD
- UPB2C821MRD
- UPB2D101MHD1TN
- UPB2D220MPD1TD
- UPB2D391MRD
- UPB2D470MHD1TO
- UPB2D561MRD6
相關(guān)庫(kù)存
更多- UPA800T-T1-A
- UPA801T-T1-A
- UPA806T-T1-A
- UPA810T-T1
- UPAP-1-1RE-51-10.0A-D
- UPB1507GV
- UPB160808T-101Y-N
- UPB1A101MDD1TD
- UPB1A221MED1TD
- UPB1A331MPD1TD
- UPB1A332MHD1TO
- UPB1C101MED
- UPB1C221MPD
- UPB1C222MHD1TO
- UPB1C471MPD1TD
- UPB1E101MED1TD
- UPB1E221MPD
- UPB1H010MDD
- UPB1H100MDD
- UPB1H101MPD
- UPB1H220MDD
- UPB1H220MDD1TA
- UPB1H221MPD
- UPB1H221MPD1TD
- UPB1H331MPD1TD
- UPB1H3R3MDD1TD
- UPB1H471MHD
- UPB1H4R7MDD1TD
- UPB1V101MPD
- UPB1V102MHD1TO
- UPB1V330MDD1TD
- UPB1V331MPD1TD
- UPB1V471MPD
- UPB2C220MPD
- UPB2C330MPD1TD
- UPB2C391MHD
- UPB2C471MHD
- UPB2C680MHD1TO
- UPB2C681MRD6
- UPB2D101MHD
- UPB2D151MHD1TN
- UPB2D221MHD
- UPB2D470MHD
- UPB2D561MRD
- UPB2D680MHD
