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首頁 >UPA80>規(guī)格書列表

零件編號(hào)	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
UPA800T	文件：211.33 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPA800T	文件：51.21 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPA800TF	文件：15.18 Kbytes Page：1 Pages	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION TheUPA800TFcontainstwoNE680NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPA800T-T1	文件：51.21 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPA800T-T1	文件：211.33 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2ELEMENTS)MINIMOLD TheμPA800Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPA801	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:\|S21e\|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPA801T	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:\|S21e\|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPA801T	文件：217.64 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain\|S21e\|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
UPA801TC	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:\|S21e\|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPA801TC-T1	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:\|S21e\|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC

詳細(xì)參數(shù)

型號(hào)：
UPA80
制造商：
NEC
制造商全稱：
NEC
功能描述：
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市凌旭科技有限公司	UPA800T	NEC	2016+	SOT363	19400	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	UPA800T	NEC	24+	SOT-363/SOT-323-6	7952	新進(jìn)庫存/原裝	詢價(jià)
深圳市博浩通科技有限公司	UPA800T	NEC	23+	SC70-6	12000	全新原裝優(yōu)勢	詢價(jià)
深圳市海天鴻電子科技有限公司	UPA800T	NEC	1708+	SO6	12500	只做原裝進(jìn)口,假一罰十	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	UPA800T	NEC	22+	SO6	8200	全新進(jìn)口原裝現(xiàn)貨	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	UPA800T	MINI	24+	SMD其他電子元	17	一級(jí)代理全新原裝現(xiàn)貨	詢價(jià)
深圳市振宏微科技有限公司	UPA800T	SOT-363	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	UPA800T	NEC	22+23+	SC70-6	78416	絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳兆威電子有限公司	UPA800T	NEC	23+	SC70-6	999999	原裝正品現(xiàn)貨量大可訂貨	詢價(jià)
深圳誠思涵科技有限公司	UPA800T	NEC	19+	SC70-6	20000	5000	詢價(jià)

更多UPA80供應(yīng)商更新時(shí)間2025-3-7 8:30:00

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