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UPA507TE

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNELMOSFETWITHSCHOTTKYBARRIERDIODE FORSWITCHING DESCRIPTION TheμPA507TEisaswitchingdevice,whichcanbedrivendirectly bya1.8Vpowersource. ThisdeviceincorporatesaMOSFET,whichfeaturesalowon-state resistanceandexcellentswitchingcharacteristicsandalow

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA507TE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA507TE-T1-A

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNELMOSFETWITHSCHOTTKYBARRIERDIODE FORSWITCHING DESCRIPTION TheμPA507TEisaswitchingdevice,whichcanbedrivendirectly bya1.8Vpowersource. ThisdeviceincorporatesaMOSFET,whichfeaturesalowon-state resistanceandexcellentswitchingcharacteristicsandalow

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA507TE-T1-AT

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNELMOSFETWITHSCHOTTKYBARRIERDIODE FORSWITCHING DESCRIPTION TheμPA507TEisaswitchingdevice,whichcanbedrivendirectly bya1.8Vpowersource. ThisdeviceincorporatesaMOSFET,whichfeaturesalowon-state resistanceandexcellentswitchingcharacteristicsandalow

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA507TE-T2-A

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNELMOSFETWITHSCHOTTKYBARRIERDIODE FORSWITCHING DESCRIPTION TheμPA507TEisaswitchingdevice,whichcanbedrivendirectly bya1.8Vpowersource. ThisdeviceincorporatesaMOSFET,whichfeaturesalowon-state resistanceandexcellentswitchingcharacteristicsandalow

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA507TE-T2-AT

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNELMOSFETWITHSCHOTTKYBARRIERDIODE FORSWITCHING DESCRIPTION TheμPA507TEisaswitchingdevice,whichcanbedrivendirectly bya1.8Vpowersource. ThisdeviceincorporatesaMOSFET,whichfeaturesalowon-state resistanceandexcellentswitchingcharacteristicsandalow

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VI-507

REMARK:N.C=NOCONNECTION

REMARKS:N.C.=NOCONNECTION

VARITRONIXVaritronix international limited

京東方精電京東方精電有限公司（香港）

VLA507

BG2C-UniversalGateDrivePrototypeBoard

POWEREX

Powerex Power Semiconductors

VLA507

HybridICIGBTGateDriver

Description:TheBG2CisatwochannelgatedrivecircuitdesignedforusewithhighfrequencyoptimizedIGBTmodules.TheBG2CutilizesPowerexVLA507orVLA513hybridgatedriversandVLA106seriesDCtoDCconverterstoprovideefficientswitchingofmodulesratedupto300A.Thehybridgatedr

POWEREX

Powerex Power Semiconductors

VS-507

VoltageControlledSAWOscillator

Vectron

Vectron International, Inc

詳細參數(shù)

  • 型號：

    UPA507TE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
SOT-153/SOT-23-5
14200
新進庫存/原裝
 詢價
NEC
24+
SOT-153
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價
NEC
22+
SOT153
8200
全新進口原裝現(xiàn)貨
 詢價
SOT-153
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
NEC
2022
SOT-153 / SOT-23-5
14200
全新原裝現(xiàn)貨熱賣
 詢價
NEC
23+
SOT23-5
12000
全新原裝優(yōu)勢
 詢價
NEC
24+
SOT23-5/3000
5989
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
2016+
SOT23-5
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NEC
24+
SOT153
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
SOT23-5
10265
提供BOM表配單只做原裝貨值得信賴
 詢價
更多UPA507TE供應(yīng)商 更新時間2025-3-16 16:00:00

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