首頁(yè) >UCN-5852EP>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
UCN-5852EP | PACKAGE INFORMATION
| etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | |
IntroductiontoKnowlesPrecisionDevices Applications RFamplifier LCFiltersandNetworks BroadbandWirelessLAN MedicalDevices CordlessandCellularphones DR/CrystalOscillator Microstriplinefilters | KNOWLES Knowles | KNOWLES | ||
CustomerSpecification Construction 1)Component11X1HOOKUP a)Conductor28(7/36)AWGSilverPlatedCopper0.015 b)Insulation0.010Wall,Nom.PTFE0.035+/-0.004 (1)Color(s) WHITE,BLACK,RED,GREEN,YELLOW,BLUE,BROWN ORANGE,GRAY,VIOLET,WHITE/BLACK,WHITE/BLUE WHITE/ORANGE,WHITE/VIOLET | ALPHAWIREAlpha Wire 阿爾法電線(xiàn) | ALPHAWIRE | ||
CustomerSpecification | ALPHAWIREAlpha Wire 阿爾法電線(xiàn) | ALPHAWIRE | ||
MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. ?[MOS] ?LowON-resistance ?Ultrahigh-speedswitching ?4Vdrive ?[SBD] | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
PowerMOSFET(Vdss=20V) Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments 德州儀器 | TI1 | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments 德州儀器 | TI1 | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments 德州儀器 | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments 德州儀器 | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments 德州儀器 | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments 德州儀器 | TI1 |
詳細(xì)參數(shù)
- 型號(hào):
UCN-5852EP
- 功能描述:
PACKAGE INFORMATION
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ALLEGRO |
1630+ |
PLCC44 |
530 |
代理品牌 |
詢(xún)價(jià) | ||
ALLEGRO |
2020+ |
PLCC |
8000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
ALLEGRO |
21+ |
PLCC |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
ALLEGRO |
21+ |
PLCC |
1372 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
ALLEGRO/雅麗高 |
23+ |
PLCC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
ALLEGRO/雅麗高 |
23+ |
PLCC |
11200 |
原廠(chǎng)授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢(xún)價(jià) | ||
ALLEGRO |
90+ |
PLCC44 |
2806 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
ALLEGRO |
2211+ |
PLCC |
3796 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | ||
ALLEGRO |
PLCC |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢(xún)價(jià) | |||
ALLEGRO |
23+ |
PLCC |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) |
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