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CPH5852

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. ?[MOS] ?LowON-resistance ?Ultrahigh-speedswitching ?4Vdrive ?[SBD]

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

IRF5852

PowerMOSFET(Vdss=20V)

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852PBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TR

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TRPBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

ISO5852S

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

ISO5852SDW

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ISO5852SDWR

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

KS5852

CMOSINTEGRATEDCIRCUIT

SamsungSamsung semiconductor

三星三星半導(dǎo)體

LC5852N

Four-BitSingle-ChipMicrocontrollerwithOn-ChipLCDDriversforSmall-ScaleControlinMedium-SpeedApplications

Overview TheLC5852Nisahigh-performancefour-bitsingle-chipbuilt-inLCDdrivermicroprocessorthatprovidesavarietyofattractivefeaturesincludinglow-voltageoperationandlowpowerdissipation.TheLC5852NwasdevelopedasanupwardlycompatibleversionoftheLC5851NandprovidesaRO

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

MAX5852

Dual,8-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX5852

Dual,10-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    CPH5852

  • 制造商:

    SANYO

  • 制造商全稱:

    Sanyo Semicon Device

  • 功能描述:

    MOSFET

  • P-Channel Silicon MOSFET SBD

  • Schottky Barrier Diode

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Sanyo
23+
CPH5
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
SANYO
23+
NA
306
專做原裝正品,假一罰百!
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)
ON
23+
NA
3000
全新原裝正品!一手貨源價(jià)格優(yōu)勢(shì)!
詢價(jià)
SANYOSEMICON
22+
NA
5000
絕對(duì)全新原裝現(xiàn)貨
詢價(jià)
SANYO/三洋
22+
5-CPH
25000
只有原裝原裝,支持BOM配單
詢價(jià)
SANYO/三洋
21+
CPH5
9000
原裝現(xiàn)貨假一賠十
詢價(jià)
SANYO/三洋
23+
CPH5
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
SANYO/三洋
23+
CPH5
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
SANYO/三洋
2022
CPH5
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
更多CPH5852供應(yīng)商 更新時(shí)間2024-12-27 16:06:00