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TPW

BreezePro? Horizontal Wind Turbine

Features ?IntegratedControllerwithDumpLoadtoOptimizePerformance ?WindTurbinestartupwindspeedof2.1m/s(4.5mph) ?Smoothandquietrunningmaintenancefreesealedturbine ?Sealeddiecastaluminumhousingforprotectionfromharshenvironments ?Verylightandcompact ?EasyInstalla

TYCONSYSTEMS

Tycon Systems, Inc.

TPW1500CNH

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=13mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=150V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW1R005PL

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=34nC(typ.) (3)Smalloutputcharge:Qoss=98nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.75mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW1R104PB

Silicon N-channel MOS (U-MOS-H)

1.Applications ?Automotive ?MotorDrivers ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW1R306PL

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=22nC(typ.) (3)Smalloutputcharge:Qoss=77.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW2900ENH

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=24mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW2R508NH

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=28nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=2.0mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=75V) (5)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW3221

Low Voltage 1Ω SPDT Analog Switch

Features ?Latch-UpPerformanceExceeds800mAPerJESD78, ClassII ?SupplyVoltage:1.65Vto5.5V ?LowON-StateResistance:typical0.95ΩatVs=4.5V ?Bandwidth:100MHz ?Fastswitchingtimes:tON=40ns,tOFF=15ns ?Break-Before-MakeSwitching ?OperationTemperatureRange:–40°C

3PEAK3PEAK INC.

思瑞浦思瑞浦微電子科技(蘇州)股份有限公司

TPW3221-FR

Low Voltage 1Ω SPDT Analog Switch

Features ?Latch-UpPerformanceExceeds800mAPerJESD78, ClassII ?SupplyVoltage:1.65Vto5.5V ?LowON-StateResistance:typical0.95ΩatVs=4.5V ?Bandwidth:100MHz ?Fastswitchingtimes:tON=40ns,tOFF=15ns ?Break-Before-MakeSwitching ?OperationTemperatureRange:–40°C

3PEAK3PEAK INC.

思瑞浦思瑞浦微電子科技(蘇州)股份有限公司

TPW3221-VR

Low Voltage 1Ω SPDT Analog Switch

Features ?Latch-UpPerformanceExceeds800mAPerJESD78, ClassII ?SupplyVoltage:1.65Vto5.5V ?LowON-StateResistance:typical0.95ΩatVs=4.5V ?Bandwidth:100MHz ?Fastswitchingtimes:tON=40ns,tOFF=15ns ?Break-Before-MakeSwitching ?OperationTemperatureRange:–40°C

3PEAK3PEAK INC.

思瑞浦思瑞浦微電子科技(蘇州)股份有限公司

TPW3R70APL

Silicon N-channel MOS (U-MOS-H)

1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=74nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.1mΩ(typ.)(VGS=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW4R008NH

MOSFETs Silicon N-channel MOS

Applications ?DC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=18nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=80V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW4R50ANH

MOSFETs Silicon N-channel MOS

Applications ?DC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=22nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=3.7mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW5200FNH

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPWR7904PB

Silicon N-channel MOS (U-MOS-H)

1.Applications ?Automotive ?MotorDrivers ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.65mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPWR8004PL

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=23nC(typ.) (3)Smalloutputcharge:Qoss=85.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.65mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPWR8503NL

MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=16nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=1.0mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW100A

Topstek Current Transducers

TOPSTEK

Topstek Inc.

TPW125A

Topstek Current Transducers

TOPSTEK

Topstek Inc.

TPW150A

Topstek Current Transducers

TOPSTEK

Topstek Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    TPW

  • 制造商:

    TOPSTEK

  • 制造商全稱:

    TOPSTEK

  • 功能描述:

    Topstek Current Transducers

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