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TPS7H2201MDAPTSEP

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SEP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2201-SP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2201-SP

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201Y/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201Y/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201Y/EM

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國(guó)德州儀器公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Texas Instruments
23+/24+
32-TSSOP
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢(xún)價(jià)
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢(xún)價(jià)
N/A
99
詢(xún)價(jià)
TI
22+
(KGD)
6000
原廠(chǎng)原裝,價(jià)格優(yōu)勢(shì)!13246658303
 詢(xún)價(jià)
TI/德州儀器
23+
XCEPT
8355
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣
 詢(xún)價(jià)
24+
N/A
47000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
TI
23+
CFP-16
5000
全新原裝正品現(xiàn)貨
 詢(xún)價(jià)
TI
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂(yōu)
 詢(xún)價(jià)
TI
16+
原廠(chǎng)封裝
29
宇航IC只做原裝假一罰十
 詢(xún)價(jià)
TI
24+
N/A
90000
原廠(chǎng)正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理
 詢(xún)價(jià)
更多TPS7H2201MDAPTSEP供應(yīng)商 更新時(shí)間2024-11-19 14:28:00

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