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TPS7H2211Y/EM

TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2211Y/EM

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211Y/EM

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PTPS7H2211DAPTSEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PTPS7H2211DAPTSEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211EVM-CVAL

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211EVM-CVAL

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2211EVM-CVAL

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2211EVM-CVAL

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211HKR/EM

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2211HKR/EM

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2211HKR/EM

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211HKR/EM

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211MDAPTSEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211MDAPTSEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211-SEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211-SEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2211-SP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
TI
22+
(KGD)
6000
原廠原裝,價(jià)格優(yōu)勢!13246658303
 詢價(jià)
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣
 詢價(jià)
Texas Instruments
23+/24+
6-TSSOP
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價(jià)
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
TI
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價(jià)
TI
16+
原廠封裝
29
宇航IC只做原裝假一罰十
 詢價(jià)
TI
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理
 詢價(jià)
TI
24+
30
全新原裝
 詢價(jià)
TI
18+
原廠原裝假一賠十
26
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠
 詢價(jià)
TI/德州儀器
21+
CFP-16
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
更多TPS7H2211Y/EM供應(yīng)商 更新時(shí)間2024-11-18 14:04:00

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