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9160

SimplePCIBridging

OXFORD

Oxford Semiconductor

9160

Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

BELDENBelden Inc.

百通電纜設(shè)計(jì)科技有限公司

9160

CountersunkTypeHRivets

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9160F

CountersunkTypeHRivets

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ACTF9160

RFFilter

ACT

Advanced Crystal Technology

BD9160FVM

1chDC竊?CConverterControllerICwithBuilt-inSynchronousRectifier

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

ECS-9160

ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩超恩股份有限公司

ECS-9160P

ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩超恩股份有限公司

EP9160

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

PCA

PCA ELECTRONICS INC.

FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC9160R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Toshiba Semiconductor and Stor
24+
16-SOIC(0.295,7.50mm 寬)
25000
in stock隔離器IC-原裝正品
 詢價(jià)
Toshiba Semiconductor and Stor
23+/24+
16-SO
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價(jià)
Toshiba
24+
16-SOIC
45347
專注原裝正品代理分銷,認(rèn)準(zhǔn)水星電子
 詢價(jià)
TOSHIBA/東芝
22+
SOP4
36341
原裝正品現(xiàn)貨
 詢價(jià)
TOSHIBA/東芝
2021+
SOP4
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
TOSHIBA/東芝
21+
SOP4
1964
詢價(jià)
TOSHIBA(東芝)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
TOSHIBA/東芝
22+
SOP4
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
TI
2022+
SOT-563
8000
詢價(jià)
TOSHIBA/東芝
23+
SOP4
3000
原裝正品
 詢價(jià)
更多TLX9160T(TPL,F供應(yīng)商 更新時(shí)間2025-1-12 14:13:00

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