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FRE9160R

30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC9160R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

H-9160

HANDLE

BUD

Bud Industries, Inc.

H-9160

HANDLE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HDM9160

FrequencySynthesizer

SHOULDERShoulder

好達電子無錫市好達電子股份有限公司

I9160CFI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

I9160CYI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

IRHM9160

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.087ohm,Id=-35*A)

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenc

IRF

International Rectifier

IRHM9160

SimpleDriveRequirements

IRF

International Rectifier

IRHNA9160

SimpleDriveRequirements

IRF

International Rectifier

IRHNA9160

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.087ohm,Id=-38A)

InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffe

IRF

International Rectifier

ISD9160

ISDCortex-M0ChipCorder

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ISD9160

ISD9160TechnicalReferenceManual

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

詳細參數

  • 型號:

    FRE9160R

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs

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TQFP
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更多FRE9160R供應商 更新時間2024-11-2 10:59:00