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TF025N06NG

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF025N06NGusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitchi

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

FDI025N06

N-ChannelPowerTrench?MOSFET60V,265A,2.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI025N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=265A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP025N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=265A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP025N06

N-ChannelPowerTrench?MOSFET60V,265A,2.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IPD025N06N

Optimizedforsynchronousrectification

Features ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,normallevel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD025N06N

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD025N06N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD025N06N

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NTMYS025N06CL

PowerMOSFET60V,27.5m,21A,SingleN??hannel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTMYS025N06CLTWG

PowerMOSFET60V,27.5m,21A,SingleN??hannel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS025N06CL

MOSFET–Power,SingleN-Channel60V,27.5m,21A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS025N06CLTWG

MOSFET–Power,SingleN-Channel60V,27.5m,21A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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PDFNWB8L(5x6)
6000
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24+
N/A
76000
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HANBO
24+
con
10000
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HRS/廣瀨
2420+
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273494
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ALLIED
2021
SMD0402
93771
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ALLIED
23+
SMD0402
11200
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HRS/廣瀨
24+
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DIP
3500
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21+
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5000
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更多TF025N06NG供應(yīng)商 更新時間2024-12-22 18:30:00