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FDI025N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=265A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDI025N06

N-Channel PowerTrench? MOSFET 60V, 265A, 2.5m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP025N06

N-ChannelPowerTrench?MOSFET60V,265A,2.5m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP025N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=265A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

GT025N06AM

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AMusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

GT025N06AMA

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AMAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

GT025N06AQ

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AQusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

GT025N06AT

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06ATusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

IPD025N06N

Optimizedforsynchronousrectification

Features ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,normallevel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD025N06N

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    FDI025N06

  • 功能描述：

    MOSFET 60V N-Channel PowerTrench

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
I2PAK(TO-262)
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
Fairchild
24+
TO-262
410
詢價
FSC
2016+
TO262
6523
只做進口原裝現(xiàn)貨!或訂貨假一賠十!
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FSC
24+
TO262
36500
原裝現(xiàn)貨/放心購買
 詢價
Fairchild/ON
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價
FAIRCHILD/仙童
22+
TO262
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
ON Semiconductor
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Fairchild
23+
33500
詢價
FAIRCHILD/仙童
24+
TO262
39197
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
更多FDI025N06供應商 更新時間2025-6-26 16:12:00

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