TCET1100G_V01中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The TCET110. consists of a phototransistor optically

coupled to a gallium arsenide infrared-emitting diode in a

4-lead plastic dual inline package.

FEATURES

? High common mode rejection

? Low temperature coefficient of CTR

? CTR offered in 7 groups

? Reinforced isolation provides circuit

protection against electrical shock (safety

class II)

? Isolation materials according to UL 94 V-0

? Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664)

? Climatic classification 55 / 100 / 21 (IEC 60068 part 1)

? Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

? Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

? Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

? Rated recurring peak voltage (repetitive)

VIORM = 848 Vpeak

? Creepage current resistance according to VDE 0303 /

IEC 60112 comparative tracking index: CTI ≥ 175

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

? For application class I to IV at mains voltage ≤ 300 V

? For application class I to III at mains voltage ≤ 600 V

according to DIN EN 60747-5-5 (VDE 0884), suitable for:

- Switch-mode power supplies

- Line receiver

- Computer peripheral interface

- Microprocessor system interface