TCET1100G中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

FEATURES

? High common mode rejection

? Low temperature coefficient of CTR

? CTR offered in 9 groups

? Reinforced isolation provides circuit protection against electrical shock (safety class II)

? Isolation materials according to UL 94 V-O

? Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)

? Climatic classification 55/100/21 (IEC 60068 part 1)

? Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak

? Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV

? Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS

? Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak

? Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175

? Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

? for appl. class I - IV at mains voltage ≤ 300 V

? for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for:

??? - Switch-mode power supplies

??? - Line receiver

??? - Computer peripheral interface

??? - Microprocessor system interface