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SVF4N90DTR

Marking：SVF4N90D；Package：TO-252-2L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90DTR

Marking：SVF4N90D；Package：TO-252-2L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90F

Marking：SVF4N90F；Package：TO-220F-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90F

Marking：SVF4N90F；Package：TO-220F-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90MJ

Marking：SVF4N90；Package：TO-251J-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90MJ

Marking：SVF4N90；Package：TO-251J-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90T

Marking：SVF4N90T；Package：TO-220-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF-00-B

Plug-in Signal Conditioners M-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

SVF-00-B

Plug-in Signal Conditioners M-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

SVF-00-B/CE

Plug-in Signal Conditioners M-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SVF

  • 功能描述：

    Crimping tools and machines

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SILAN
15
TO-220
15000
原廠直銷
 詢價(jià)
Freescale
LQFP176
1759
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
士蘭微
15+
TO220F
10000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
 詢價(jià)
SILAN
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
仕蘭微
24+/25+
TO220
10
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
士蘭微
23+
TO-220F
17500
原裝正品,假一罰十
 詢價(jià)
SL
16+
TO-220
8800
進(jìn)口原裝大量現(xiàn)貨熱賣中
 詢價(jià)
SILAN
2016+
TO-220
3683
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
士蘭微
24+
TO220F
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
Silan
1706+
TO252
9100
只做原裝進(jìn)口,假一罰十
 詢價(jià)
更多SVF供應(yīng)商 更新時(shí)間2024-3-26 11:52:00

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