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首頁 >STW42N65M5>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STW42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STW42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STW42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STW42N65M5	文件：436.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STB42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STB42N65M5	文件：313.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STB42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STF42N65M5	文件：310.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=33A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STF42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STF42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STF42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STI42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STI42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STI42N65M5	文件：357.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=33A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STI42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STL42N65M5	文件：686.55 Kbytes Page：14 Pages	N-channel650V,0.070廓,34AMDmesh??VPowerMOSFETinPowerFLAT??8x8HVpackage Description ThisdeviceisanN-channelMDmesh?VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH?horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STP42N65M5	文件：319.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STP42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS

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詳細參數(shù)

型號：
STW42N65M5
功能描述：
MOSFET N-Ch 650 Volt 33 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市朱博士電子科技有限公司	STW42N65M5	STMICRO	2405+	原廠封裝	8900	15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐	詢價
深圳市昂芯微科技有限公司	STW42N65M5	ST	23+	TO-247	6996	只做原裝正品現(xiàn)貨	詢價
深圳市品優(yōu)時代科技有限公司	STW42N65M5	ST	2019	TO-247	19700	INFINEON品牌專業(yè)原裝優(yōu)質	詢價
深圳和潤天下電子科技有限公司	STW42N65M5	ST/意法半導體	22+	TO-247-3	6005	原裝正品現(xiàn)貨可開增值稅發(fā)票	詢價
深圳市高捷芯城科技有限公司	STW42N65M5	ST(意法半導體)	23+	TO-247	7814	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市佳鑫美電子科技有限公司	STW42N65M5	STM	24+	TO-247	1980	強勢庫存絕對原裝公司現(xiàn)貨!	詢價
柒號芯城電子商務(深圳)有限公司	STW42N65M5	ST	2024+	N/A	70000	柒號只做原裝現(xiàn)貨價秒殺全網(wǎng)	詢價
深圳市毅創(chuàng)騰電子科技有限公司	STW42N65M5			TO-247	1000	原裝長期供貨!	詢價
深圳市博浩通科技有限公司	STW42N65M5	STMicro.	23+	TO-247	7750	全新原裝優(yōu)勢	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	STW42N65M5	ST	23+	TO-247	5000	原裝正品,假一罰十	詢價

更多STW42N65M5供應商更新時間2024-12-22 9:00:00

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