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STB42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：313.28 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF42N65M5	文件：310.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=33A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：357.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=33A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STL42N65M5	文件：686.55 Kbytes Page：14 Pages	N-channel650V,0.070廓,34AMDmesh??VPowerMOSFETinPowerFLAT??8x8HVpackage Description ThisdeviceisanN-channelMDmesh?VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH?horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：319.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW42N65M5	文件：436.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS

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型號(hào)：
STB42N65M5
功能描述：
MOSFET N-ch 650 Volt 33Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市昂芯微科技有限公司	STB42N65M5	ST	23+	TO263	6996	只做原裝正品現(xiàn)貨	詢價(jià)
深圳和潤(rùn)天下電子科技有限公司	STB42N65M5	ST/意法半導(dǎo)體	22+	TO-263-3	6003	原裝正品現(xiàn)貨可開增值稅發(fā)票	詢價(jià)
深圳市柏芯特電子科技有限公司	STB42N65M5	ST/意法半導(dǎo)體	2023	TO-263-3	6000	公司原裝現(xiàn)貨/支持實(shí)單	詢價(jià)
深圳市高捷芯城科技有限公司	STB42N65M5	ST(意法半導(dǎo)體)	23+	D2PAK	8498	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	STB42N65M5	ST	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市博浩通科技有限公司	STB42N65M5	STMicro.	23+	D2PAK	7750	全新原裝優(yōu)勢(shì)	詢價(jià)
深圳市海天鴻電子科技有限公司	STB42N65M5	ST	1650+	?	7500	只做原裝進(jìn)口,假一罰十	詢價(jià)
深圳市達(dá)恩科技有限公司	STB42N65M5	STMicroelectronics	18+	NA	3214	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	STB42N65M5	ST	2018+	TO263	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心	詢價(jià)
深圳市華斯頓科技有限公司	STB42N65M5	ST	22+23+	TO263	72571	絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)

更多STB42N65M5供應(yīng)商更新時(shí)間2024-11-5 14:52:00

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