首頁 >STW24NM65N>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
STW24NM65N | N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | |
STW24NM65N | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=19A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandr | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
詳細參數(shù)
- 型號:
STW24NM65N
- 功能描述:
MOSFET N-channel 650V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-247 |
65400 |
詢價 | |||
ST/意法 |
24+ |
TO-247-3 |
25 |
原廠授權(quán)代理 價格絕對優(yōu)勢 |
詢價 | ||
ST/意法 |
17+ |
TO247 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
ST專家 |
2021+ |
TO247 |
6800 |
原廠原裝,歡迎咨詢 |
詢價 | ||
ST |
10+ |
TO-247 |
27000 |
絕對原裝現(xiàn)貨,價格優(yōu)勢! |
詢價 | ||
ST |
24+ |
TO-247-3 |
600 |
詢價 | |||
ST |
23+ |
TO-247 |
8795 |
詢價 | |||
ST |
24+ |
TO-247 |
3000 |
全新原裝環(huán)?,F(xiàn)貨 |
詢價 | ||
STMicro. |
23+ |
TO-247 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
ST |
24+ |
TO-247-3 |
600 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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