首頁(yè) >STRW-640-VTR>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STRW-640-VTR | Sealed Tact Switch | BournsBourns Electronic Solutions 伯恩斯伯恩斯(邦士) | Bourns | |
ReferenceDesign | ZoranZoran Corporation 卓然美國(guó)卓然股份有限公司 | Zoran | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structureVDMOStechnology.Theimprovedprocessandcellstructure havebeenespeciallytailoredtominimizeon-stateresistance,provide super | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structureVDMOStechnology.Theimprovedprocessandcellstructure havebeenespeciallytailoredtominimizeon-stateresistance,provide super | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelMOSFET [SEMIPOWER] GeneralDescription ThispowerMOSFETisproducedinSAMWINwithadvancedVDMOSprocess,planarstripe.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristic | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
GeneralBattery | SUNNYWAYShenzhen Sunnyway Battery Tech Co.Ltd. 三威電源深圳市三威電源科技有限公司 | SUNNYWAY | ||
N-channelMOSFET GeneralDescription ThispowerMOSFETisproducedinSAMWINwithadvancedVDMOSprocess,planarstripe.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.Itismain | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
GeneralBattery | SUNNYWAYShenzhen Sunnyway Battery Tech Co.Ltd. 三威電源深圳市三威電源科技有限公司 | SUNNYWAY | ||
GeneralBattery SW640(6V4.0AH) | SUNNYWAYShenzhen Sunnyway Battery Tech Co.Ltd. 三威電源深圳市三威電源科技有限公司 | SUNNYWAY | ||
N-channelEnhancedmodeTO-220/TO-220FT/TO-263MOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedtechnologyofSAMWIN.ThistechnologyenablethepowerMOSFETtohavebettercharacteristics,includingfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics. Features ●Highrug | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
ConstantCurrent(Amp)andConstantPower(Watt)DischargeTableat25??77?? SW640E(6V4.0AH) | SUNNYWAYShenzhen Sunnyway Battery Tech Co.Ltd. 三威電源深圳市三威電源科技有限公司 | SUNNYWAY | ||
N-channelMOSFET GeneralDescription ThispowerMOSFETisproducedinSAMWINwithadvancedVDMOSprocess,planarstripe.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.Itismain | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
BandpassFilter | MINI Mini-Circuits | MINI |
詳細(xì)參數(shù)
- 型號(hào):
STRW-640-VTR
- 制造商:
BOURNS
- 制造商全稱:
Bourns Electronic Solutions
- 功能描述:
Sealed Tact Switch
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
BOURNS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
SK |
24+ |
TO-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
SANKEN |
2023+ |
TO220 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||
SANKEN |
23+24 |
TO-220 |
29850 |
原裝原盤(pán)原標(biāo).保證每一片都來(lái)自原廠 |
詢價(jià) | ||
SANKEN |
2315+ |
TO-220 |
3868 |
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價(jià) | ||
sk |
18+ |
220 |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢價(jià) | ||
SANKEN |
2023+ |
ZIP |
4865 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
SANKEN |
23+ |
TO-220 |
5500 |
現(xiàn)貨,全新原裝 |
詢價(jià) | ||
SANKEN |
23+ |
ZIP5 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
SK |
21+ |
TO220 |
12588 |
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì) |
詢價(jià) |
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