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STP9NM60N

isc N-Channel MOSFET Transistor

FEATURES ?DrainCurrent–ID=6.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP9NM60N

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP9NM60N

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

9NM60

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60G-TND-R

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60L-TND-R

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STD9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET

TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STD9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STD9NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    STP9NM60N

  • 功能描述：

    MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法
24+
TO-220
2983
只做原廠渠道 可追溯貨源
 詢價
ST/意法半導(dǎo)體
22+
TO-220-3
6007
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
STMicroelectronics
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
ST
22+23+
TO-220
27091
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ST/意法
23+
TO-220
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
STM原廠目錄
24+
TO-220
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
ST
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
STM
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
STMicroelectronics
2021++
只做原裝
5850
進口原裝假一賠百,現(xiàn)貨熱賣
 詢價
S
23+
TO-220
10000
公司只做原裝正品
 詢價
更多STP9NM60N供應(yīng)商 更新時間2025-1-31 15:00:00

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