首頁 >9NM60L-TND-R>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
9NM60L-TND-R | 9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET ?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | |
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=6.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
UTC |
20232024 |
TO263 |
6000 |
老牌代理,長期現(xiàn)貨 |
詢價 | ||
TOSHIBA/東芝 |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
TOSHIBA/東芝 |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
ST |
23+ |
TO-220F |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
22+ |
TO-220F |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術支持! |
詢價 | ||
TOSHIBA/東芝 |
22+ |
TO-220F |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
TOSHIBA |
24+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
TOSHIBA |
1822+ |
TO-220F |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
TOSHIBA |
18+ |
TO-220F |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
拓鋒 |
23+ |
TSSOP8 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 |
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