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STP85NF3LL

N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION ThisapplicationspecificPowerMOSFETisthethirdgenarationofSTMicroelectronicsunique“SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceandgatecharge.Whenusedashighandlowsideinbuckregulators,itgives

STMICROELECTRONICSSTMicroelectronics

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STP85NF3LL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP85NF55

N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STMICROELECTRONICSSTMicroelectronics

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STP85NF55

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP85NF55_V01

Marking：P85NF55；Package：TO-220；Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET? II Power MOSFETs in D2PAK and TO-220 packages

Features ?AEC-Q101qualified ?Exceptionaldv/dtcapability ?100avalanchetested ?Lowgatecharge Applications ?Switchingapplications Description ThesePowerMOSFETshavebeendevelopedusingSTMicroelectronics’unique STripFETprocess,whichisspecificallydesignedtominimize

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STP85NF55L

N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniquesinglefeaturesizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkable

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP85NF55L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP8N120K5

Marking：8N120K5；Package：TO-220；N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh?K5 technology

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STP8N65M5

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

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STP8N80K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=950mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STP8

  • 制造商：

    STMicroelectronics

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
24+
TO-220
15000
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ST
17+
TO-220
6200
詢(xún)價(jià)
ST
1822+
TO-220
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
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ST
18+
TO-220
41200
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ST
21+
TO-220
235
原裝現(xiàn)貨假一賠十
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ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ST/意法
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
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ST/意法
2022+
TO-220
12888
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ST/意法
22+
TO-220
20000
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ST
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
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更多STP8供應(yīng)商 更新時(shí)間2025-3-26 16:00:00

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