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STP80NS04Z

N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout. Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

STMICROELECTRONICSSTMicroelectronics

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STP80NS04ZB

N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout. Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

STMICROELECTRONICSSTMicroelectronics

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STP80PF55

P-CHANNEL 55V - 0.016 ohm - 80A TO-220 STripFET??II POWER MOSFET

Description ThesePowerMOSFETsarethelatestdevelopmentofSTMicroelectronicsuniquesinglefeaturesizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsallowingremarka

STMICROELECTRONICSSTMicroelectronics

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STP80PF55

P-channel 55V - 0.016廓 - 80A - TO-220 - D2PAK STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelaestdevelopmentofSTMicroelectronicsunique“Singlefeaturesize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

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STP80PF55

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=-80A@TC=25℃ ·DrainSourceVoltage :VDSS=-55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP8444

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-220andTO-263Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STP85N15F4

Marking:85N15F4;Package:TO-220;N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET? DeepGATE? Power MOSFET

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETisamongthelatest developmentsthatuseanadvancedtechnology (STripFET?DeepGATE?technology),which hasbeenes

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STP85N15F4

Marking:85N15F4;Package:TO-220;N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET? DeepGATE? Power MOSFET

Features ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-stateresistance,withanewgat

STMICROELECTRONICSSTMicroelectronics

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STP85N15F4_V01

N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET? DeepGATE? Power MOSFET

Features ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-stateresistance,withanewgat

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STP85N3LH5

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description Thisproductutilizesthe5thgenerationofdesignrulesofST’sproprietarySTripFETTMtechnology.ThelowestavailableRDS(on)*Qg,inthestandardpackages,makesthisdevicesuitableforthemostdemandingDC-DCconverterapplications,wherehighpowerdensityistobeachieved. F

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詳細(xì)參數(shù)

  • 型號(hào):

    STP8

  • 制造商:

    STMicroelectronics

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ST
24+
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15000
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17+
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6200
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ST
1822+
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9852
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ST
18+
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41200
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ST
21+
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235
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ST/意法
23+
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50000
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ST/意法
2022
TO-220
80000
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ST/意法
2022+
TO-220
12888
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ST/意法
22+
TO-220
20000
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ST
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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更多STP8供應(yīng)商 更新時(shí)間2025-3-26 16:00:00