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STP24N60M6

N-channel 600 V, 162 m typ., 17 A, MDmesh? M6 Power MOSFET in a TO-220 package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP24N60M6

Package：TO-220-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 600V TO220

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB24N60M6

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB24N60M6

N-channel600V,162m廓typ.,17A,MDmesh??M6PowerMOSFETinaD?PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF24N60M6

N-channel600V,162mtyp.,17A,MDmeshTMM6PowerMOSFETinaTO-220FPpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI24N60M6

N-channel600V,162mtyp.,17A,MDmesh?M6PowerMOSFETinanI2PAKpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL24N60M6

N-channel600V,0.175typ.,15A,MDmeshTMM6PowerMOSFETinaPowerFLATTM8x8HVpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STO24N60M6

N-channel600V,162mtyp.,17A,MDmeshM6PowerMOSFETinaTO?LLpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW24N60M6

N-channel600V,162mtyp.,17A,MDmeshTMM6PowerMOSFETinaTO-247package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STP24N60M6

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個

  • 系列：

    MDmesh? M6

  • 包裝：

    管件

  • FET 類型：

    N 通道

  • 技術(shù)：

    MOSFET（金屬氧化物）

  • 25°C 時電流 - 連續(xù)漏極 (Id)：

    17A（Tj）

  • 安裝類型：

    通孔

  • 供應(yīng)商器件封裝：

    TO-220

  • 封裝/外殼：

    TO-220-3

  • 描述：

    MOSFET N-CH 600V TO220

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法半導(dǎo)體
22+
TO-220-3
6005
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
STM
23+
TO-220-3
2000
原裝現(xiàn)貨支持送檢
 詢價
ST
23+
TO-220
12500
ST系列在售,可接長單
 詢價
ST(意法半導(dǎo)體)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
24+
QFN
142000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價
ST
22+
TO220
10000
全新原裝 實(shí)單來談
 詢價
ST/意法
21+
TO220
4380
原裝現(xiàn)貨假一賠十
 詢價
ST/意法半導(dǎo)體
2021+
TO-220-3
7600
原裝現(xiàn)貨，歡迎詢價
 詢價
ST/意法半導(dǎo)體
24+
TO-220-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
ST/意法
2022+
5000
只做原裝,價格優(yōu)惠,長期供貨。
 詢價
更多STP24N60M6供應(yīng)商 更新時間2025-3-22 8:30:00

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