首頁(yè)>STGWA80H65DFBAG>規(guī)格書(shū)詳情

STGWA80H65DFBAG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

STGWA80H65DFBAG
廠商型號(hào)

STGWA80H65DFBAG

功能描述

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

絲印標(biāo)識(shí)

G80H65DFBAG

封裝外殼

TO-247

文件大小

280.59 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 23:00:00

STGWA80H65DFBAG規(guī)格書(shū)詳情

Features

? AEC-Q101 qualified

? High-speed switching series

? Maximum junction temperature: TJ = 175 °C

? Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A

? Minimized tail current

? Tight parameter distribution

? Positive temperature VCE(sat) coefficient

? Soft and very fast recovery antiparallel diode

Applications

? PFC

? High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法半導(dǎo)體
21+
TO-247-3
6000
原裝現(xiàn)貨
詢價(jià)
ST
2023
TO247
3800
公司原裝現(xiàn)貨/支持實(shí)單
詢價(jià)
ST
23+
TO-247 long leads
12500
ST系列在售,可接長(zhǎng)單
詢價(jià)
ST
TO247
39800
公司只有原裝
詢價(jià)
ST
23+
TO247
25630
原裝正品
詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
ST
589220
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量
詢價(jià)
ST
14+
TO-247
5326
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ST/意法半導(dǎo)體
21+
TO-247-3
8080
只做原裝,質(zhì)量保證
詢價(jià)
ST/意法半導(dǎo)體
21+
TO-247-3
13880
公司只售原裝,支持實(shí)單
詢價(jià)