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STGD7NB60H中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

STGD7NB60H
廠商型號

STGD7NB60H

功能描述

N-CHANNEL 7A - 600V - DPAK PowerMESH??IGBT

文件大小

327.18 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-6-22 16:00:00

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STGD7NB60H規(guī)格書詳情

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH? IGBTs, with outstanding perfomances. The suffix H identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ VERY HIGH FREQUENCY OPERATION

■ CO-PACKAGED WITH TURBOSWITCHT

■ TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family

■ ANTIPARALLEL DIODE

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

產(chǎn)品屬性

  • 型號:

    STGD7NB60H

  • 功能描述:

    IGBT 晶體管 N-Ch 600 Volt 7 Amp

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
STM
24+
TO-252
5000
全新原裝正品,現(xiàn)貨銷售
詢價
ST
24+
TO252DPAK
8866
詢價
STM
24+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ST
22+
TO252DPAK
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
STMicroelectronics
2022+
DPAK
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
STM
07+
TO-252
2607
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST
TO252DPAK
22+
6000
十年配單,只做原裝
詢價
ST
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST/意法
23+
TO-
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
ST
15+
TO-252
2502
原裝
詢價