首頁 >STGB30H60DF>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STGB30H60DF | 600 V, 30 A high speed trench gate field-stop IGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Trench gate Field-Stop IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Automotive-gradetrenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?Highspeedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.7V(typ.)@IC=30A ?LowVFsoftrecoveryco-packageddiode ?Tightparametersdistribution ?Saferparalleling ?L | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Automotive-gradetrenchgatefield-stop,600V,30A,high-speedHBseriesIGBTinaTO?LLpackage Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?High-speedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.6V(typ.)@IC=30A ?LowVFsoft-recoveryco-packageddiode ?Tightparameterdistribution ?Saferparalleling ?Lo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Avalancherated | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Avalancherated | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Avalancherated | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Avalancherated | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Avalancherated | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Avalancherated | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
1926+ |
D2PAK |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
ST |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
ST |
22+ |
D2PAK |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ST/意法 |
23+ |
TO-263 |
29403 |
原盒原標(biāo),正品現(xiàn)貨 誠(chéng)信經(jīng)營(yíng) 價(jià)格美麗 假一罰十 |
詢價(jià) | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng),一手貨源,原裝正品可零售! |
詢價(jià) | ||
STMicroelectronics |
2022+ |
D2PAK |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
ST/意法 |
22+ |
N |
28000 |
原裝現(xiàn)貨只有原裝.假一罰十 |
詢價(jià) | ||
ST |
2405+ |
原廠封裝 |
50000 |
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83268823鄒小姐 |
詢價(jià) | ||
ST/意法 |
22+ |
TO-263 |
99916 |
詢價(jià) |
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