叼嘿视频APP下载,精品人妻日韩中文十区,91精品国产综合久久香蕉下载

首頁 >STD8NM60N>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STD8NM60N	文件：492.5 Kbytes Page：17 Pages	N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STD8NM60N	文件：706.65 Kbytes Page：19 Pages	N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STD8NM60N-1	文件：492.5 Kbytes Page：17 Pages	N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STD8NM60ND	文件：727.53 Kbytes Page：17 Pages	N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STD8NM60N-1	文件：706.65 Kbytes Page：19 Pages	N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STD8NM60ND	文件：324.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STF8NM60N	文件：492.5 Kbytes Page：17 Pages	N-channel600V-0.56廓-7A-TO-220-TO-220FP-IPAK-DPAKsecondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STF8NM60N	文件：706.65 Kbytes Page：19 Pages	N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STF8NM60ND	文件：727.53 Kbytes Page：17 Pages	N-channel600V,0.59,7A,FDmeshIIPowerMOSFET Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STF8NM60ND	文件：310.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STP8NM60	文件：558.91 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9Ω,8AMDmesh?PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STP8NM60	文件：319.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STP8NM60	文件：489.18 Kbytes Page：16 Pages	N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STP8NM60	文件：603.7 Kbytes Page：13 Pages	N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STP8NM60	文件：561.24 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STP8NM60D	文件：735.3 Kbytes Page：13 Pages	N-CHANNEL600V-0.9廓-8A-TO-220/D2PAKFastDiodeMDmesh??PowerMOSFET Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters Generalfeatures ■Highdv/dtandavalanchecapabilities	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STP8NM60D	文件：1.10919 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
STP8NM60FP	文件：558.91 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9Ω,8AMDmesh?PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
STP8NM60FP	文件：311.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
STP8NM60FP	文件：489.18 Kbytes Page：16 Pages	N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS

12 >>>

詳細參數(shù)

型號：
STD8NM60N
功能描述：
MOSFET N-Channel 600V Pwr Mosfet
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鴻昌盛電子科技有限公司	STD8NM60N		2015+		10	公司現(xiàn)貨庫存	詢價
深圳市賽爾通科技有限公司	STD8NM60N	ST	23+	DPAK	65400		詢價
深圳市坤融電子科技有限公司	STD8NM60N	ST/意法	24+	TO-252	3200	只做原廠渠道可追溯貨源	詢價
深圳市創(chuàng)新跡電子有限公司	STD8NM60N	ST專家	2021+	DPAK	6800	原廠原裝,歡迎咨詢	詢價
深圳市躍創(chuàng)芯科技有限公司	STD8NM60N	ST/意法	21+	TO-252-3	60000	絕對原裝正品現(xiàn)貨,假一罰十	詢價
深圳市匯萊威科技有限公司	STD8NM60N	ST/意法	24+	TO-252	504395	免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
深圳市一線半導體有限公司	STD8NM60N	ST	24+	TO-252	7500		詢價
深圳市昌和盛利電子有限公司	STD8NM60N	ST	23+	DPAK	8795		詢價
千層芯半導體(深圳)有限公司	STD8NM60N	ST	17+	DPAK	3000	全新原裝環(huán)?，F(xiàn)貨	詢價
深圳市弘為電子有限公司	STD8NM60N	ST	16+	08+	1	原裝現(xiàn)貨假一罰十	詢價

更多STD8NM60N供應商更新時間2024-11-18 16:00:00

詳細參數(shù)

相關規(guī)格書

相關庫存