首頁(yè) >STD8NM60ND>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STD8NM60ND | N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STD8NM60ND | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
N-channel600V-0.56廓-7A-TO-220-TO-220FP-IPAK-DPAKsecondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.59,7A,FDmeshIIPowerMOSFET Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V@Tjmax,0.9Ω,8AMDmesh?PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNEL600V-0.9廓-8A-TO-220/D2PAKFastDiodeMDmesh??PowerMOSFET Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters Generalfeatures ■Highdv/dtandavalanchecapabilities | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V@Tjmax,0.9Ω,8AMDmesh?PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
STD8NM60ND
- 功能描述:
MOSFET N-Ch 600 Volt 7 Amp FDMesh
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
21+ |
TO-252 |
1516 |
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨! |
詢價(jià) | ||
STMicro. |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
ST |
2020+ |
TO-252 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
STM |
1816+ |
TO-252 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
ST |
12+ |
TO-252 |
30390 |
原盤(pán)現(xiàn)貨/2500 |
詢價(jià) | ||
STM |
2020+ |
TO-252 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
STMicroelectronics |
21+ |
DPAK |
2500 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢價(jià) | ||
STM原廠目錄 |
24+ |
DPAK |
28500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售 |
詢價(jià) | ||
ST/意法 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
2021+ |
TO-252 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) |
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