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STD45N10

N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STD45N10F7

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features ?AmongthelowestRDS(on)on

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STD45N10F7

N-Channel MOSFET uses advanced SGT technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

STD45N10F7

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

45N10

N-Channel100-V(D-S)MOSFET

FEATURES TrenchFET??PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100%RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CEB45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

MTW45N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=35mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW45N10E

TMOSPOWERFET45AMPERES100VOLTSRDS(on)=0.035OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas

Motorola

Motorola, Inc

SPR45N10

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSP45N10

N-ChannelEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

STB45N10L

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.028? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■LOWLEAKAGECURRENT ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP45N10

N-CHANNEL100V-0.027ohm-45A-TO-220/TO-220FIPOWERMOSTRANSISTOR

N-CHANNEL100V-0.027?-45A-TO-220/TO-220FIPowerMOSTransistor ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARAC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP45N10FI

N-CHANNEL100V-0.027ohm-45A-TO-220/TO-220FIPOWERMOSTRANSISTOR

N-CHANNEL100V-0.027?-45A-TO-220/TO-220FIPowerMOSTransistor ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARAC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STU45N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

WSF45N10G

N-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體(深圳)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    STD45N10

  • 制造商:

    STMicroelectronics

  • 功能描述:

    POWER MOSFET - Tape and Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
SOT252
10000
原裝正品,假一罰十
詢價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
ST
23+
NA
19587
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
詢價(jià)
ST專家
22+23+
TO-252
29665
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
ST
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
三年內(nèi)
1983
納立只做原裝正品13590203865
詢價(jià)
ST專家
20+
TO-252
69052
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
ST專家
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
ST/意法
24+
TO-252
3800
大批量供應(yīng)優(yōu)勢(shì)庫(kù)存熱賣
詢價(jià)
STMicroelectronics
21+
DPAK
2500
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
詢價(jià)
更多STD45N10供應(yīng)商 更新時(shí)間2024-11-17 15:35:00