MTW45N10E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
MTW45N10E規(guī)格書(shū)詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
產(chǎn)品屬性
- 型號(hào)：
MTW45N10E
- 制造商：
Rochester Electronics LLC
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
ON |
2020+ |
TO247 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
ONSEMI/安森美 |
24+ |
TO247 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
ON |
23+ |
TO-247 |
6893 |
詢價(jià) | |||
MOT |
TO247 |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
2017+ |
TO247 |
6528 |
只做原裝正品假一賠十! |
詢價(jià) | |||
MOT |
22+23+ |
TO247 |
13767 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
MOT |
TO-247 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
MOT |
28 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中!! |
詢價(jià) | ||||
MOTO |
2023+ |
TO247 |
3635 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) |
