首頁 >STD12N10L-TR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
12A,100VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel100V(D-S)MOSFET | UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?) | UMW | ||
N-Channel100V(D-S)MOSFET APPLICATIONS ?PrimarySideSwitch | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
12Amps,100VoltsN-CHANNELPowerMOSFET | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重慶平偉實業(yè)重慶平偉實業(yè)股份有限公司 | CHONGQING | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團 | PENTAIR | ||
PERFORATEDPANELS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團 | PENTAIR | ||
N-CHANNELMOSFETinaTO-220FPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel100V(D-S)MOSFET FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel100V(D-S)MOSFET FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
TO-252 |
36800 |
詢價 | |||
ST |
22+23+ |
TO-252 |
39753 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
ST意法半導體 |
24+23+ |
TO-252 |
12580 |
16年現(xiàn)貨庫存供應商終端BOM表可配單提供樣品 |
詢價 | ||
ST |
TO-252 |
93480 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST/意法 |
23+ |
NA/ |
930 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST/意法 |
22+ |
TO-252 |
20000 |
原裝現(xiàn)貨,實單支持 |
詢價 |
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