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STD10NM60ND

N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STF10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STF10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STF10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STI10NM60N

N-channel600V,0.53Ωtyp.,10AMDmesh?IIPowerMOSFETinI2PAKpackage

Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh?technology.ThisrevolutionaryPower MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STP10NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STP10NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP10NM60ND

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STU10NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STD10NM60ND

  • 功能描述：

    MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STMicroelectronics
24+
DPAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
ST
23+
TO252
6996
只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
ST
23+
TO252
1830000
原裝正品!假一罰十!
 詢(xún)價(jià)
ST/意法半導(dǎo)體
22+
TO-252-3
6003
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢(xún)價(jià)
ST/意法半導(dǎo)體
2023
TO-252-3
6000
公司原裝現(xiàn)貨/支持實(shí)單
 詢(xún)價(jià)
ST(意法半導(dǎo)體)
23+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢(xún)價(jià)
ST
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢(xún)價(jià)
ST
22+23+
TO220
20983
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
更多STD10NM60ND供應(yīng)商 更新時(shí)間2024-11-16 17:45:00

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