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STF10NM60ND

N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STF10NM60ND

N-Channel 650V (D-S)Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STI10NM60N

N-channel600V,0.53Ωtyp.,10AMDmesh?IIPowerMOSFETinI2PAKpackage

Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh?technology.ThisrevolutionaryPower MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STP10NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STP10NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STP10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STP10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STP10NM60ND

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STU10NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STU10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

詳細參數(shù)

  • 型號：

    STF10NM60ND

  • 功能描述：

    MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-220FP
30000
晶體管-分立半導體產品-原裝正品
 詢價
STMICRO
2405+
原廠封裝
8900
15年芯片行業(yè)經驗/只供原裝正品:0755-83267371鄒小姐
 詢價
STM
21+
TO-220FP-3
2000
原裝正品 有掛有貨
 詢價
STM
21+
1000
TO-220FP-3
 詢價
ST/意法半導體
22+
TO-220-3
6007
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST/意法半導體
2023
TO-220-3
6000
公司原裝現(xiàn)貨/支持實單
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網
 詢價
ST
1701+
?
7500
只做原裝進口,假一罰十
 詢價
ST
22+23+
TO252
20359
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
STM原廠目錄
24+
TO-220FP
28500
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
更多STF10NM60ND供應商 更新時間2024-11-16 17:45:00

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