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STB

Miniature toggle switches, IP67

APEX-ELECTRONICS

Apex Electronics Co., Ltd

STB-0114033018-KFKF-S1

Broadband Amplifier, 10 MHz to 40 GHz, 30 dB Gain, 18 dBm P1dB

Description: ModelSTB-0114033018-KFKF-S1isabroadbandbenchtopdriveramplifierwithatypicalsmallsignalgainof30dBandanominalP1dBof+18dBmacrossthefrequencyrangeof10MHzto40GHz.ThepowersupplyrequiredisasinglephaseACvoltageintherangeof100to240VAC,whichc

ERAVANT

Eravant

STB-0114034018-KFKF-S1

Broadband Amplifier, 10 MHz to 40 GHz, 40 dB Gain, 18 dBm P1dB

FEATURES Ultra-BroadbandCoverage GoodGainFlatness APPLICATIONS BenchTopPowerAmplification AntennaRange PowerBoosting

ERAVANT

Eravant

STB-0115033018-2F2F-S1

Broadband Amplifier, 10 MHz to 50 GHz, 30 dB Gain, 18 dBm P1dB

Description: ModelSTB-0115033018-2F2F-S1isabroadbandbenchtopdriveramplifierwithatypicalsmallsignalgainof30dBandanominalP1dBof+18dBmacrossthefrequencyrangeof10MHzto50GHz.ThepowersupplyrequiredisasinglephaseACvoltageintherangeof100to240VAC,whichc

ERAVANT

Eravant

STB-0115034018-2F2F-S1

Broadband Amplifier, 10 MHz to 50 GHz, 40 dB Gain, 18 dBm P1dB

FEATURES Ultra-BroadbandCoverage GoodGainFlatness APPLICATIONS BenchTopPowerAmplification AntennaRange PowerBoosting

ERAVANT

Eravant

STB-0117033015-VFVF-S1

Broadband Amplifier, 10 MHz to 70 GHz, 30 dB Gain, 15 dBm P1dB

Description: ModelSTB-0117033015-VFVF-S1isabroadbandbenchtopdriveramplifierwithatypicalsmallsignalgainof30dBandanominalP1dBof+15dBmacrossthefrequencyrangeof10MHzto70GHz.ThepowersupplyrequiredisasinglephaseACvoltageintherangeof100to240VAC,whichc

ERAVANT

Eravant

STB100N10F7

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100N10F7_V01

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NF03L-03

N-CHANNEL 30V - 0.0026 W -100A D?PAK/I?PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NF03L-03-01

N-CHANNEL 30V - 0.0026 W -100A D?PAK/I?PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NF04

N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NF04-1

N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NF04L

N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NF04T4

N-Channel 40 V (D-S) MOSFET

FEATURES ?ThunderFET?powerMOSFET ?Maximum175°Cjunctiontemperature ?100RgandUIStested ?Materialcategorization:fordefinitionsofcompliancepleasesee

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STB100NF04T4

AEC-Q101 qualified

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NH02L

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET?technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB100NH02LT4

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET?technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB10100

SCHOTTKY RECTIFIER

Features ?150?CTJoperation ?Centertapconfiguration ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

STB10100C

SCHOTTKY RECTIFIER

Features ?150?CTJoperation ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?TrenchMOSSchottkytechnol

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

STB10120

SCHOTTKY RECTIFIER

Features ?150?CTJoperation ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?TrenchMOSSchottkytechnol

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STB

  • 制造商：

    Cooper Hand Tools/Weller

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STMICS
24+
N/A
1802
只做原裝 正品
 詢價(jià)
NA
23+
NA
26094
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)
 詢價(jià)
ST
20+
NA
3000
原裝現(xiàn)貨,質(zhì)量保證,可出樣品,可開發(fā)票
 詢價(jià)
ST/意法
21+
原廠COC隨貨
500000
原裝正品
 詢價(jià)
ST
24+
SMD
7500
十年品牌!原裝現(xiàn)貨!!!
 詢價(jià)
IBM
2138+
BGA
8960
專營(yíng)BGA,QFP原裝現(xiàn)貨,假一賠十
 詢價(jià)
ST
24+
TDFN-8
18000
原裝正品 有掛有貨 假一賠十
 詢價(jià)
ST
22+23+
TO-263
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
ST/意法
22
QFN
15000
3月31原裝,微信報(bào)價(jià)
 詢價(jià)
ST/意法
20
1000
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實(shí)單
 詢價(jià)
更多STB供應(yīng)商 更新時(shí)間2024-12-31 15:08:00

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