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首頁(yè) >SSD2106>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
TN2106	文件：822.75 Kbytes Page：14 Pages	N-ChannelEnhancement-ModeVerticalDMOSFET	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
TN2106	文件：550.85 Kbytes Page：6 Pages	N-ChannelEnhancement-ModeVerticalDMOSFET	SUTEX Supertex, Inc	SUTEX
TN2106	文件：550.85 Kbytes Page：6 Pages	N-ChannelEnhancement-ModeVerticalDMOSFET	SUTEX Supertex, Inc	SUTEX
TN2106	文件：32.189 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped	SUTEX Supertex, Inc	SUTEX
TN2106ND	文件：45.67 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs	SUTEX Supertex, Inc	SUTEX
TN2106ND	文件：32.189 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped	SUTEX Supertex, Inc	SUTEX
TPC-2106	文件：1.00099 Mbytes Page：5 Pages	IndustrialWindowsCETouchPanelComputers	NI National Instruments Inc.	NI
TR2106SY	文件：255.77 Kbytes Page：7 Pages	RECTIFIERDIODE FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers	TRSYS Transys Electronics	TRSYS
TW2106	文件：254.43 Kbytes Page：2 Pages	TW2106/TW2108EmbeddedPrecisionGPSL1Antenna	TALLYSMAN Tallysman Wireless Inc.	TALLYSMAN
UM2106	文件：299.03 Kbytes Page：6 Pages	ATTENUATORANDPOWERPINDIODES2??30MHz	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
UM2106	文件：113.95 Kbytes Page：3 Pages	PINDIODE DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
UM2106B	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UM2106D	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UPG2106	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPG2106TB	文件：155.75 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@	CEL California Eastern Labs	CEL
UPG2106TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPG2106TB	文件：247.61 Kbytes Page：14 Pages	GaAsINTEGRATEDCIRCUITS FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
VN2106	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN2106N	文件：472.96 Kbytes Page：5 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VP2106	文件：456.67 Kbytes Page：4 Pages	P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda	SUTEX Supertex, Inc	SUTEX

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詳細(xì)參數(shù)

型號(hào)：
SSD2106
功能描述：
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 2.5A I(D) | SO

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市百諾芯科技有限公司	SSD2106	FAIRCHILD/仙童	23+	SOP-8	24190	原裝正品代理渠道價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市百域芯科技有限公司	SSD2106	FAIRCHILD/仙童	21+	SOP-8	30000	優(yōu)勢(shì)供應(yīng) 實(shí)單必成可13點(diǎn)增值稅	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	SSD2106	VBSEMI/臺(tái)灣微碧	23+	SOIC-8	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	SSD2106	VB	21+	SOIC-8	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市瑞卓芯科技有限公司	SSD2106	FAIRCHILD/仙童	22+	SOP-8	18000	原裝正品	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	SSD2106	SAMSUNG/三星	22+	SOIC-8	25000	只有原裝原裝,支持BOM配單	詢價(jià)
深圳市吉中創(chuàng)電子科技有限公司	SSD2106	VBSEMI	23+	SOIC-8	15868	只做原裝歡迎咨詢	詢價(jià)
深圳市一線半導(dǎo)體有限公司	SSD2106TF	SAMSUNG	24+	SOP-8	1126		詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	SSD2106TF	SAM	23+	SMD	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢價(jià)
深圳市賽美科科技有限公司	SSD2106TF	SAMSUNG		SOP-8	68500	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)

更多SSD2106供應(yīng)商更新時(shí)間2024-12-25 16:00:00

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