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UM2106D

Product Change Notification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

Package：接線柱；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 射頻 描述：SI PPIN HERMETIC STUD

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

產(chǎn)品屬性

  • 產(chǎn)品編號：

    UM2106D

  • 制造商：

    Microchip Technology

  • 類別：

    分立半導體產(chǎn)品 > 二極管 - 射頻

  • 包裝：

    卷帶（TR）

  • 二極管類型：

    PIN - 單

  • 電壓 - 峰值反向（最大值）：

    600V

  • 不同?Vr、F 時電容：

    2.5pF @ 100V，1MHz

  • 不同?If、F 時電阻：

    2 歐姆 @ 100mA，2MHz

  • 工作溫度：

    -65°C ~ 175°C

  • 封裝/外殼：

    接線柱

  • 描述：

    SI PPIN HERMETIC STUD

供應商型號品牌批號封裝庫存備注價格
Microchip
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
UNIVERSAL
24+
DIP
3
詢價
UMEC
2021+
DIP
11000
十年專營原裝現(xiàn)貨,假一賠十
 詢價
UMEC
23
DIP
55000
原廠渠道原裝正品假一賠十
 詢價
UMEC
23+
DIP
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
原廠
2023+
模塊
600
專營模塊,繼電器,公司原裝現(xiàn)貨
 詢價
UMEC
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
更多UM2106D供應商 更新時間2025-6-12 15:01:00

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