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SPW8103S

Dual OP-AMP and 2.5V 0.7 Voltage Reference

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

TPC8103

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TPC8103

TRANSISTORSILICONPCHANNELMOSTYPE

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=9.5m?(typ.) ?Highforwardtransferadmittance:|Yfs|=20S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8103

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8103

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?Notebook -LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TPCA8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS4)

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=?10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8103

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8103

NoteboookPCApplicationsPortableEqipmentApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8103

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=?10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8103

TRANSISTORSILICONPCHANNELMOSTYPE(U竊?OS??

SwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=100to300(IC=0.3A) ?Lowcollector-emittersaturation:VCE(sat)=0.2V(max) ?High-speedswitching:tf=100ns(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8103

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8103-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8103-H

HighEfficiencyDC-DCConverterApplicationsNotebookPCApplicationsPortableEquipmentApplicationsCCFLInverterApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8103-H

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(UltraHighspeedU-MOSIII)

HighEfficiencyDC-DCConverterApplications NotebookPCApplications PortableEquipmentApplications CCFLInverterApplications ?Smallfootprintduetoasmallandthinpackage ?Highspeedswitching ?Smallgatecharge:QSW=6.5nC(typ.) ?Lowdrain-sourceON-resistance:RDS(ON)=31

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TQ8103

622Mb/sClock&DataRecovery

TheTQ8103isamonolithicclockanddatarecovery(CDR)ICthatreceivesNRZdata,extractsthehigh-speedclock,andpresentstheseparateddataandclockasitsoutputs.ThisdeviceisdesignedspecificallyforSONETOC-12andSDHSTM-4applicationsat622Mb/s. Features ?Single-chipCDRcir

TriQuint

TriQuint Semiconductor

UH8103

HALLEFFECTMICROSWITCHIC

UTCUnisonic Technologies

友順友順科技股份有限公司

UPC8103

MIXEROSCILLATORICFORPAGERSYSTEM

DESCRIPTION μPC8103TandμPC8108Taresiliconmonolithicintegratedcircuitsdesignedasmixer-oscillatorseriesforpagersystem.Dueto1Vsupplyvoltage,theseICsaresuitableforlowvoltagepagersystem.TheseICsarepackagedin6pinminimoldsuitableforhigh-densitysurfacemounting.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8103T

MIXEROSCILLATORICFORPAGERSYSTEM

DESCRIPTION μPC8103TandμPC8108Taresiliconmonolithicintegratedcircuitsdesignedasmixer-oscillatorseriesforpagersystem.Dueto1Vsupplyvoltage,theseICsaresuitableforlowvoltagepagersystem.TheseICsarepackagedin6pinminimoldsuitableforhigh-densitysurfacemounting.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

VCMB8103-RC

CommonModeChokewithBase

ALLIED

Allied Components International

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24+
3010
5000
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23+
3010
50000
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2022
3010
80000
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2022+
3010
6000
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24+23+
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12580
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9250
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200000
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16500
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更多SPW8103S供應(yīng)商 更新時(shí)間2024-11-16 10:20:00